Recrystallization of silicon by pulsed lasers
نویسندگان
چکیده
2014 Calculation of the evolution of temperature during pulsed laser annealing has been performed. The results are presented in directly useful figures for the two kinds of laser generally used (YAG, Ruby). The results are compared to various experimental measurements performed by RBS. If the crystallographic quality is quite good, TSC and DLTS measurements have shown that electrically active defects are still present after laser annealing. Revue Phys. Appl. 15 (1980) 865-868 AVRIL 1980,
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